About the choice of ReRAM device type

Question

About the choice of ReRAM device type

Closed this issue 4 years ago · 3 comments

Hello, when I was reading the user manual you gave, I found that ReRAM has many different types of devices, such as Ag:a-Si and TaOx/HfOx. Why in your simulator, the RealDevice type uses Ag:a-Si instead of TaOx/HfOx? It seems that TaOx/HfOx has lower write latency and higher accuracy. Is it because of other limitations? How should I choose when I select the device type? thank you very much!

Answer 1 · 2020-09-14T07:53:36.000Z

If I want to change the device type to TaOx/HfOx, what parameters and corresponding parameter values of RealDevice in cell.cpp should I change? Thank you

Answer 2 · 2020-10-27T02:48:29.000Z

Hi, you need to change the maxConductance/minConductance, writeVoltageLTP/LTD, writePulseWidthLTP/LTD, maxNumLevelLTP/LTD, NL_LTP/LTD, sigmaDtoD et.al. There is a tutorial in the user manual under the folder "documens". Thank you.

Answer 3 · 2020-10-27T03:41:45.000Z

Thanks, I saw the user_manual.pdf, but I don't know how to correspond the data in the table with these variables. For example, which row in Table 2 corresponds to maxConductance/minConductance.