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A comprehensive list of materials losses at millikelvin temperatures and single photon powers

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materials

A comprehensive list of materials losses at millikelvin temperatures and single photon powers

DIELECTRIC MATERIALS

Dielectric material measurements. Columns (from left to right): material of interest (Material), reference where the measurement is reported (Reference), method of dielectric deposition (Dep.), design of the measured device (Geom.), reported low power loss δ_LP, and resonator-induced intrinsic TLS loss Fδ^0_TLS. CVD: chemical vapor deposition. Therm. ox.: thermal oxidation. PECVD: plasma-enhanced CVD. ICP CVD: inductively coupled plasma CVD. MBE: molecular beam epitaxy. ECR-PECVD: electron cyclotron resonance PECVD. LE: lumped element resonator design. LE PPC: lumped element resonator with the parallel plate capacitor. IDC: lumped element resonator with the interdigitated capacitor.

Note that values cannot be directly compared due to differences in the TLS filling factor, resonance frequency, Qi/Qc matching, fabrication, magnetic shielding, IR filtering and isolation, thermalization, and data fitting.

Material Reference Dep. Geom. δ_LP [x 10^-5] Fδ^0_TLS [x 10^-5]
LaAlO3 Degnan 20221 Substrate CPW 0.91
MgAl2O4 Degnan 20221 Substrate CPW 0.5
a-SiC:H Buijtendorp 20212 PECVD Microstrip 3.2
a-Si Hahnle 2021[^Hahnle2021] PECVD Microstrip 3.7
a-Ge Kopas 20213 Therm. evap. CPW 0.47-1.1
InGaAs/InAs/InGaAs/InAlAs stack on InP Phan 2021^[Phan2021] MBE CPW 40
Al2O3 McRae 20204 Sputter LE PPC 100
HSQ Niepce 20205 Spin-on-glass CPW 800
B4C Wisbey 20196 Sputter CPW 10-15
BN Wisbey 20196 Sputter CPW 6
AlOx Brehm 20177 Anodic ox. CPW + PPC 4-22
a-Si Lecocq 20178 PECVD LE PPC 15-50
SiN Duff 20169 ICP-PECVD Microstrip 78
SiO2 Goetz 201610 Therm. ox. CPW 0.34-0.89
SiNx Sarabi 201611 PECVD LE PPC 78
AlOx Deng 201412 Plasma ox. LE overlap 140-180
HfO2 Burnett 201313 Sputter LE IDC 1.5-2.5
Al2O3 Burnett 201313 Sputter LE IDC 2.0-2.5
Al2O3 Cho 201314 PLD LE PPC 3-5
SiOx Li 201315 ECR-PECVD Microstrip 100-700
AlOx Pappas 201116 Therm. ox. CPW F x 100
Al2O3 Weides 201117 MBE LE PPC 6
a-SiO2 Cicak 201018 ECR-PECVD LE PPC 600
a-SiN Cicak 201018 ECR-PECVD LE PPC 40-50
a-Si Cicak 201018 Sputter LE PPC 150-200
Nb2O5 Kaiser 201019 Anodic ox. LE PPC 100-400
SiO Kaiser 201019 Therm. evap. LE PPC 20-50
SiNx Kaiser 201019 PECVD LE PPC 10-30
a-SiN Paik 201020 ICP CVD LE PPC 2.5-120
a-Si:H OConnell 200821 NA LE PPC, CPW 1-13
SiNx OConnell 200821 NA LE PPC, CPW 10-20
SiO2 OConnell 200821 Therm. ox. CPW 30-33
Si OConnell 200821 Sputtered CPW 50-60
AlN OConnell 200821 NA CPW 110-180
SiO2 OConnell 200821 PECVD CPW 270-290
MgO OConnell 200821 NA CPW 500-800
a-SiO2 Martinis 200522 CVD LE PPC 500
a-SiNx Martinis 200522 CVD LE PPC 20

THIN FILM SUPERCONDUCTING METALS

Loss measurements of superconducting metals. Columns (from left to right): superconductor in the measured device (SC), reference where the measurement is reported (Reference), method of metal deposition (Dep.), surface treatments applied and etch type used to define resonators (Surf./Etch), substrate on which the metal was deposited (Substrate), design of the measured device (Geom.), reported low power loss δLP, resonator-induced intrinsic TLS loss Fδ^0_TLS, width w of the conductor, and gap g between the conductor and the ground plane. Therm. evap.: thermal evaporation. MBE: molecular beam epitaxy. PVD: plasma vapor deposition. RIE: reactive ion etch. H-pass.: hydrogen-passivated. λ/2 or λ/4: CPW resonator of length stated. LE IDC: lumped element resonator with the interdigitated capacitor. NA: information not available.

Note that values cannot be directly compared due to significant experimental differences.

SC Reference Dep. Surf./Etch Substrate Geom. δ_LP [x 10^-6] Fδ^0_TLS [x 10^-6] w/g
NbN/TiN Kim202123 Sputter NA / RIE Si λ/2 3.68
Nb Zheng202224 E-beam BOE / RIE Si λ/4 0.29 3/2
Nb Kowsari202125 E-beam Piranha+BOE / RIE Si λ/4 0.194 3/2
TiN Gao202126 MBE 300C anneal / RIE Al2O3 λ/2 hanger 0.3 10/6
TiN Gao202126 MBE 300C anneal / wet etch Al2O3 λ/2 hanger 0.3 10/6
TiN Lock201927 Sputter HF / RIE Si λ/4 0.2-30 3/12
Nb Nersisyan201928 PVD Various / RIE Si λ/4 0.8-6
TiN Woods201929 Sputter RCA / RIE Si λ/4 0.3-1
Al Burnett 201830 E-beam HF / wet etch Si λ/4 1.3 1.1
TiN Calusine 201831 Sputter RCA / RIE Si λ/4 0.3 16/8-22/11
Al Earnest 201832 E-beam none / RIE Si λ/4 3.1 3.27 15/9
Al Earnest 201832 E-beam RCA-1+HF / RIE Si λ/4 1.9 1.53 15/9
Al Earnest 201832 E-beam Anneal / RIE Si λ/4 1.8 1.56 15/9
Al Earnest 201832 E-beam RCA-1+HF+anneal / RIE Si λ/4 1.2 0.8 15/9
In McRae 201833 Therm. evap. none / wet etch Si λ/4 40 12/6
In McRae 201833 Therm. evap. HF / wet etch Si λ/4 50 12/6
TiN Shearrow 201834 ALD Nano-Strip, HF / RIE Si LE IDC 0.5-17
NbN DeGraaf 201735 Sputter none / NA Al2O3 Fractal 10.4-10.6 g=2
NbN DeGraaf 201735 Sputter Anneal / NA Al2O3 Fractal 7.44, 7.69 g=2
Nb+Pt Burnett 201636 MBE NA / RIE Al2O3 LE IDC 12
Nb Burnett 201636 Sputter NA / RIE Al2O3 Fractal 1.1
Nb Goetz 201610 Sputter HF / RIE Si λ/2 0.9 20/12
Nb Goetz 201610 Sputter Ar mill / RIE Al2O3 λ/2 1.6 20/12
Al Richardson 201637 MBE Various / wet etch Si λ/4 0.2-760 3/2-22/12
Al Richardson 201637 MBE Various / RIE Si λ/4 0.5-4800 3/2-22/12
Al Richardson 201637 MBE Various / wet etch Al2O3 λ/4 0.5-5.3 3/2-22/12
Al Richardson 201637 MBE Various / RIE Al2O3 λ/4 0.4-7.4 3/2-22/12
TiN Ohya 201438 Sputter Nano-Strip+HF / RIE Si λ/4 1 15/10
Nb Burnett 201313 Sputter NA Al2O3 LE IDC 2.0
Re Cho 201314 MBE Anneal / NA Al2O3 LE IDC 30-50
NbTiN Barends 2010b39 Sputter H-pass., RIE Si λ/4 3 3/2-6/2
Ta Barends 2010b39 Sputter NA, RIE Si λ/4 30 5/2
Nb Macha 201040 NA none / dry etch Al2O3 λ/2 2.4-2.6 50/30
Nb Macha 201040 NA none / dry etch Si λ/2 1.3, 1.6 50/30
Al Macha 201040 NA none / liftoff Al2O3 λ/2 2.0 50/30
Re Wang 200941 E-beam NA / RIE Al2O3 λ/4 1-3 16/6.4-5/2
Al Wang 200941 Sputter NA / RIE Al2O3 λ/4 3-10 16/6.4-5/2
Nb Gao 2008b42 NA NA Al2O3 λ/4 2.4-29.8 3/2-50/33
Nb Kumar 200843 NA NA, RIE Si λ/4 29.4 5/1
Al O'Connell 200821 NA NA Si λ/2 <5-12
Re O'Connell 200821 NA NA Al2O3 λ/2 <6-10
Al O'Connell 200821 NA NA Al2O3 λ/2 <9-21
Al O'Connell 200821 NA NA Al2O3 LE IDC 41-47

REFERENCES

Footnotes

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