Full simulation of CMOS beta- probe in Geant4

HOW TO RUN:

cd build
cmake -DGeant4_DIR=$G4INSTALL ../
make
./exampleB1

./exampleB1 -AbsD -1 -Z 0.010 -Fil 0 -Source 8 -Sensor 2 -PixT 1.75 -NPrim 1000000
./exampleB1 -AbsD -1 -Z 0.445 -Fil 1 -Source 8 -Sensor 2 -PixT 1.75 -NPrim 1000000

Source Choice:

1 - Pointlike Sr
2 - Extended Sr
3 - ExtY
4 - Co60
5 - Na22
6 - Ba133
7 - Cs137
8 - Flat Ele 0-3MeV
9 - Flat Gamma 0-1MeV
10 - Na22 "nude" (PG)

Sensor Choice:

1 - MT9V011
2 - MT9V115
3 - bare 60035 SiPm

GEOMETRY (maybe no more so accurate)

Extended Source ending at Z=0
Cu collimator on top of Sr source (toggleble)
CMOS Detector starting at Z offset (Z distance is from source surface to possible resin in case of sensor 1, or up to the sensor in case of sensor 2, even if with filter)
Sensor resin filter in contact with CMOS (towards source)
Dummy volume for scoring purposes between source (or if present CU Collimator) and World to score what exits the primary generation
"infinite" carrier volume behind CMOS to simulate mechanical support

PHYSICS

Process Type SubType RadioActiveDecay 6 210 eIoni 2 2 eBrem 2 3

CPU TIMES NEEDED FOR 1e5 PRIMARIES:

To send the sim to FARM:

from build/

rsync -avzh --exclude '*.root' --exclude '*.dat' ../* collamaf@farm-login.roma1.infn.it:NewLife/CMOS/

OUTPUT:

A root file named CMOSmc_{XX}.root is created, reporting the several parameters used for the run, in which on an event (i.e. a primary particle) by event basis it is stored:

SOURCE vector (one entry per primary particle, only first 100k events are written for disk space sake):

AllX: X coordinate of primary particle [mm];
AllY: Y coordinate of primary particle [mm];
AllZ: Z coordinate of primary particle [mm];
AllCosX[]: X directive cosine of produced electron;
AllCosY[]: Y directive cosine of produced electron;
AllCosZ[]: Z directive cosine of produced electron;
AllEne[]: kinetic energy of produced particle [keV];
AllIsotope[]: parentID - 1 of track: so for example for Sr source is 0 if track is son of Sr, 1 if of Y;
ExitX[]: X coordinate of primary particle exiting the source volume [mm]; ("Exiting" means going from source to dummy or from absorber to dummy if there is an absorber)
ExitY[]: Y coordinate of primary particle exiting the source volume [mm];
ExitZ[]: Z coordinate of primary particle exiting the source volume [mm];
ExitCosX[]: X directive cosine of primary particle exiting the source volume;
ExitCosY[]: Y directive cosine of primary particle exiting the source volume;
ExitCosZ[]: Z directive cosine of primary particle exiting the source volume;
ExitEne[]: kinetic energy of primary particle exiting the source volume [keV];
ExitPart[]: kind of primary particle (11=e-, -11=e+, 22=gamma, 13=mu-...) exiting the source volume;
ExitParentID[]: partent-id of particle exiting the source
ExitProcess[]: process that created the particles that exits the source (see table above)
ExitTrackN: number of different tracks exiting the source per event

B1 vector (one entry per primary particle):

Eabs: energy absorbed in CMOS [keV];
EAbsComp[2]: vector containing energy absorbed in CMOS [keV] due to Sr (comp 1) and to Y (comp 2)
PreFilterTrackN: number of tracks entering the Filter (if present, empty otherwise);
PreFilterPart: kind of particle entering the Filter (if present, empty otherwise);
PreFilterEn: energy of particle entering the Filter (if present, empty otherwise);
PreCmosTrackN: number of tracks entering Cmos per primary (from front resin) (it's the length of the following vector);
PreCmosPart[PreCmosTrackN]: kind of particle of each track entering Cmos (from front resin);
PreCmosEn[PreCmosTrackN]: kinetic energy of particle of each tracks entering Cmos (from front resin) [keV];
PreCmosX[PreCmosTrackN]: x position of each tracks entering Cmos (from front resin) [mm];
PreCmosY[PreCmosTrackN]: y position of each tracks entering Cmos (from front resin) [mm];
PreCmosZ[PreCmosTrackN]: z position of each tracks entering Cmos (from front resin) [mm];
PreCmosEnPrim[PreCmosTrackN]: energy of the primary particle that originated the track that is now entering CMOS (from front resin) [keV];
PreCmosEventNum[PreCmosTrackN]: number of times that the event of the primary particle that originated the track that is now entering CMOS (from front resin) gave a track entering CMOS (useful to check for double countings) ;
InCmosTrackN: number of hits inside Cmos (it's the length of the following vector);
InCmosPart[InCmosTrackN]: kind of particle of hit inside Cmos;
InCmosEn[InCmosTrackN]: energy deposit of single hit of particle inside Cmos;
InCmosEnPrim[InCmosTrackN]: energy of the primary particle that origined the hit of particle inside Cmos [keV];
InCmosTime[InCmosTrackN]: time of interaction of hit inside Cmos [ns] (To be really undersood);
InCmosX[InCmosTrackN]: X position of hit inside Cmos [mm];
InCmosY[InCmosTrackN]: Y position of hit inside Cmos [mm];
InCmosZ[InCmosTrackN]: Z position of hit inside Cmos [mm];
PixelID[InCmosTrackN]: number of pixel in which the hit occurred (from 1 to NpixMax);
PixXPos[InCmosTrackN]: x position of the pixel in which the hit occurred [mm];
PixYPos[InCmosTrackN]: y position of the pixel in which the hit occurred [mm];
SourceX: X coordinate of primary particle (isotope) giving a signal in Cmos [mm];
SourceY: Y coordinate of primary particle (isotope) giving a signal in Cmos [mm];
SourceZ: Z coordinate of primary particle (isotope) giving a signal in Cmos [mm];
SourceCosX[]: X directive cosine of decay electron(s) giving a signal in Cmos;
SourceCosY[]: Y directive cosine of decay electron(s) giving a signal in Cmos;
SourceCosZ[]: Z directive cosine of decay electron(s) giving a signal in Cmos;
SourceEne[]: kinetic energy of produced particle [keV];
SourceIsotope: parentID - 1 of track: so for example for Sr source is 0 if track is son of Sr, 1 if of Y;
Nev: storing number of events generated

For example, to see energy spectrum of electrons created by Sr/Y that exit the source

Source->Draw("ExitEne","ExitPart==11&&ExitProcess==6")

Pass The MC output to data-analysis algorithm

da CMOS/CodiceCMOS


Riduzione /Users/francesco/MonteCarlo/Sonda/SimCMOS/build/CMOSmcX0_Z173_NOCuD_Fil1_TBR10_ExtSr_115_Frame100.root -noise 2018-04-20_MT9V115_stronzioRM22gradi_0000_noise_100.root -frameSize 488x648 -t 7 -mc


Riduzione /Users/francesco/MonteCarlo/Sonda/SimCMOS/build/CMOSmc_X0_Z44_NoAbs_Fil1_FlatEle_115_PxT175_N1000000_Frame1800.root -noise 2018-04-20_MT9V115_stronzioRM22gradi_0000_noise_100.root -seedSize 9 -edge 4 -checkLocalMaximumSide 9

Riduzione /Users/francesco/MonteCarlo/Sonda/SimCMOS/build/CMOSmc_X0_Z44_NoAbs_Fil1_FlatEle_115_PxT175_N1000000_Frame1800.root -noise 2018-04-20_MT9V115_stronzioRM22gradi_0000_noise_100.root



DataAnalysis /Users/francesco/MonteCarlo/Sonda/SimCMOS/build/CMOSmc_X0_Z50_NoAbs_Fil1_ExtSr_115Eff_Frame800_Reduced.root -frameSize 488x648  -mc

CREATE EFFICIENCY CURVES with macro CreaEff.C

cd /build/

GammaFilter

 .X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_N10000000","../build/CMOSmc_X0_Z44_NoAbs_Fil1_FlatGamma_115_PxT175_N10000000_Frame1800_Analized",2)

GammaNoFilter

.X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_N10000000","../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_N10000000_Frame1800_Analized",2)

LowEneGammaNoFilter

.X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_LowEne_N10000000","../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_LowEne_N10000000_Frame1800_Analized",3)

LowEneGammaFilter

.X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatGamma_115_PxT175_LowEne_N10000000","../build/CMOSmc_X0_Z44_NoAbs_Fil1_FlatGamma_115_PxT175_LowEne_N10000000_Frame1800_Analized",3)

EleFilter

.X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatEle_115_PxT175_N10000000","../build/CMOSmc_X0_Z44_NoAbs_Fil1_FlatEle_115_PxT175_N10000000_Frame1800_Analized",1)

EleNoFilter

.X CreaEff.C("../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatEle_115_PxT175_N10000000","../build/CMOSmc_X0_Z1_NoAbs_Fil0_FlatEle_115_PxT175_N10000000_Frame1800_Analized",1)

CHANGELOG

2017.12.1 by collamaf

Try to fix problem of primary particles double counting by putting a check in Stepping Action. Seems to reduce by about ~9% the number of exiting particles (NoCudZ2 test)

2017.12.4 by collamaf

Added reset of pass counter in stacking action. Seems to increase back of about another 5% the number of exiting particles. now we have about 96% of the beginning. Verified this should be the right approach.

2017.12.12 by collamaf

Corrected z_resin: no need to add 1mm of copper since distance is always from source top

2018.01.17 by collamaf

Deep reorganization of DetConstr, much clearer now
Code extended to both sensors smoothly (new argument to be passed by terminal, default sensor 1).
Fixed ExtY source problem

2018.01.30 by collamaf

Quite deep reorganization of output root file, cleaned a little in ordering and name (and updated readme)
Changed "DOTA" to "ExtY" in output file naming

2018.04.23 by collamaf

Now resin is always present in front of CMOS, if flag not selected made of air (useful for scoring)
Added double crossing check also for particles entering CMOS

2018.04.26 by collamaf

Added InCmosEnPrim to bring primary particle info to Riduzione and DataAnalysis

2018.05.7 by collamaf

first implementation of storage of time of interection. Still not clear which time to save...
Introduced possibility to simulate bare SiPm (assumed to be a particular version of CMOS detector): SensorChoice=3

2018.05.29 by collamaf

Added dummy volume in front of CMOS (towards source) to score what enters it after some problem in case of space between the CMOS and the filter (like in sensor 2-115)
Now in SteppingAction to score what enters CMOS we use the new Dummy volume
Modified size of resin in case of sensor 2 (is larger than the active area), according to datasheet
Fixed error in positioning of filter in case of sensor 1 (was after cmos)
Fixed why filter in Sensor2 was not working.. the unit for density=4 was missing, chissa come interpretava lui...

2018.05.30 by collamaf

Fixed an error in the positioning of the carrier behind CMOS
Added as argument to pass the thickness of the absorber
Added new parts from SimDaVinci (StackingAction: kill neutrinos and change in primary particle storing, fileName generated in main)
Added as argument to pass material of absorber (1: Cu, 2:Al, 3:PVC)
Now if run in vis mode the file root ends with xxxTEST not to overwrite important ones
Now arguments are taken with labels, not necessary to give them all! If a macro is provided no visualization is init.. cool!

2018.06.01 by collamaf

Added "QuickFlag" in main to automatically scale number of pixel if I want to visualize geometry
".dat" was missing after Primaries file
Fixed problem with positioning of dummy after source (or possible absorber)
Added QuickFlag to be passed as an argument to program to call for scaled down geometry
Added structure to classify energy release due to e+/e-/gamma

2018.06.06 by collamaf

Added scoring of what enters the filter (PreFilterEn/TrackN/Part) - THERE IS SOME PROBLEM! If made by hand empty the spectrum of particles hitting the filter changes... TO BE UNDERSTOOD

2018.07.25 by collamaf

Added Co60 source {SourceChoice= 4}
Whole sources volumes reorganisation
Added Na, Ba and Cs sources {SourceChoice= 5, 6, 7}

2018.08.10 by collamaf

Gamma sources have now 1mm diameter (active spot)
Added possibility to pass "label" to filename from command line
No more need for macros, now number of primaries is calculated from source activity
Pixel thickness is now passed as argument

2018.09.17 by collamaf

Finally working for efficiency!!!!

2019.05.08 by collamaf

Addedd Source 10, Na22 "nude", so that the beta+ exits

2019.05.21 by collamaf

README cleaning

collamaf/SimCMOS