This project aims to develop a 1024 *32 (4kB) SRAM with supply voltage 1.8V and access time < 2.5ns. Circuits required as inputs to the OpenRAM compiler are designed and simulated.
- Custom Cells Required for OpenRAM
- Prelayout Simulations
- Postlayout Simulations
- Future Work
- Acknowledgements
- Contact Information
- SRAM Bit cell
- Sense Amplifier
- Write Driver
- Tristate Buffer
- D-Flip Flop
To clone the Repository and download the Netlist files for Simulation, enter the following commands in your terminal.
$ sudo apt install -y git
$ git clone https://github.com/yash-k33/vsdsram
$ cd vsdsram/Simulation/Prelayout
-> Read Operation
$ ngspice cell6T_read.cir
-> Write Operation
$ ngspice cell6T_write.cir
The stability and writability of the cell are quantified by the hold margin, read margin and write margin which are determined by the static noise margin (SNM). It determines how much noise can be applied at the inputs of the two cross coupled inverters before a stable state is lost during hold or read operaring mode or a second stable state is created during write operation.
1. Hold SNM
$ ngspice holdsnm.cir
By fitting a square in the upper and lower loop, we get SNMh = 0.91V and SNMl = 0.61V respectively.
Hold SNM = min (SNMh, SNMl) = 0.61V
2. Read SNM
$ ngspice readsnm.cir
Similarly,
Read SNM = min (SNMh, SNMl) = min (0.48V, 0.39V) = 0.39V
3. Write SNM
$ ngspice writesnm.cir
By fitting the smallest square between the two curves, we get
Write SNM = 1.065V
N-curve provides the current flow information along with the voltage metrics which is equally important for an overall analysis of cell stability.
$ ngspice ncurve.cir
Read Stability Metrics
Static Voltage Noise Margin (SVNM) - It is the maximum tolerable dc noise voltage at internal nodes of the bitcell before its content flips and it is measured as the difference between point C and point A.
SVNM = 0.617V
Static Current Noise Margin (SINM) - It is the maximum tolerable dc noise current injected at internal nodes of the bitcell before its content changes and it is denoted by point B.
SINM = 255.67uA
Write Stability Metrics
Write Trip Voltage (WTV) - It is the minimum voltage drop needed to change the internal nodes of the bitcell and it is measured as the difference between point E and point C.
WTV = 0.988V
Write Trip Current (WTI) - It is the minimum amount of current needed to write the bitcell and it denoted by point D.
WTI = -53.47uA
Run the netlist file using the following command:
$ ngspice senseamp.cir
Run the netlist file using the following command:
$ ngspice writedriver.cir
Run the netlist file using the following command:
$ ngspice tristatebuff.cir
Run the netlist file using the following command:
$ ngspice dff.cir
-> Read Operation
$ ngspice 1bitsram_read.cir
-> Write Operation
$ ngspice 1bitsram_write.cir
$ cd vsdsram/Simulation/Postlayout
-> Read Operation
$ ngspice cell6T_read.spice
-> Write Operation
$ ngspice cell6T_write.spice
Run the netlist file using the following command:
$ ngspice senseamp.spice
Run the netlist file using the following command:
$ ngspice writedriver.spice
Run the netlist file using the following command:
$ ngspice tri.spice
Run the netlist file using the following command:
$ ngspice dff.spice
-> Read Operation
$ ngspice 1bitsram_read.spice
-> Write Operation
$ ngspice 1bitsram_write.spice
- Porting OSU018 technology to OpenRAM and adding the above created custom cells to it.
- Kunal Ghosh, Co-founder, VSD Corp. Pvt. Ltd.
- Philipp Gühring, Software Architect, LibreSilicon Assocation
- Yash Kumar, B.E. Electronics, Fr. Conceicao Rodrigues College of Engineering, Mumbai - laryash99@gmail.com
- Kunal Ghosh, Director, VSD Corp. Pvt. Ltd. - kunalghosh@gmail.com
- Philipp Gühring, Software Architect, LibreSilicon Assocation - pg@futureware.at